A Novel Air-gap Formation Method for Metal Interconnect
Abstract
This paper presents a breakthrough air-gap formation method for metal interconnect using electrospinning technology. As conventional low-k dielectric materials reach their physical limits, air with a dielectric constant of ~1 offers the ultimate solution for next-generation semiconductor devices beyond 2nm. The research demonstrates a scalable structure applicable to sub-10nm technology nodes, enabling unprecedented signal speed, significant power savings, and remarkable heat reduction.
Key Highlights
- First public disclosure of an air-gap formation process based on electrospinning technology
- Demonstration of scalable structure for sub-10nm technology nodes
- Simplified processing with cost efficiency compared to conventional methods
- Superior electrical performance with dielectric constant ~1
- Validated through academic peer review at IITC2022
Related Research
Breakthrough Air-gap Process Innovation
First public disclosure of an air-gap formation process based on electrospinning technology, marking a significant advancement in semiconductor interconnect manufacturing.
Scalable for the Future of Semiconductor Nodes
Demonstration of a scalable structure applicable to sub-10nm technology nodes, offering unprecedented signal speed, power savings, and thermal management capabilities.