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IITC2022 Publication
A Novel Air-gap Formation Method for Metal Interconnect
Breakthrough Innovation
First public disclosure of an air-gap formation process based on electrospinning technology, marking a significant advancement in semiconductor interconnect manufacturing.
Key Highlights
- Novel electrospinning-based air-gap formation process
- Scalable structure for sub-10nm technology nodes
- Simplified processing with cost efficiency
- Superior electrical performance with dielectric constant ~1
- Validated through academic peer review at IITC2022
Impact
This research demonstrates the viability of air-gap technology for next-generation semiconductor devices beyond 2nm, offering unprecedented signal speed, power savings, and thermal management capabilities.