A Breakthrough Metal/Air-Gap Solution for Semiconductor Devices Beyond "2nm"

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An Ideal Air-Gap Structure with Simplified Processing and Cost Efficiency

This innovative Metal/Air-Gap architecture enables the maximum achievable performance in metal interconnects, delivering unprecedented signal speed, significant power savings, and remarkable heat reduction—all essential for next-generation semiconductor devices.

Airgap SiliconTech - An Ideal Air-Gap Structure with Simplified Processing and Cost Efficiency - Advanced semiconductor air-gap technology for maximum performance in metal interconnects
Airgap SiliconTech - Overcoming Dielectric Limits with Air - Conventional low-k materials reached physical limits, air with dielectric constant ~1 offers ultimate solution for next-generation semiconductors

Innovative Technology

Overcoming Dielectric Limits — With "Air".

Conventional low-k materials have reached their physical limits. Air, with a dielectric constant of ~1, offers the ultimate path forward.

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Airgap SiliconTech - Innovative Technology Solutions for Semiconductor Process Enhancement
Innovative technology solutions
Explore Airgap SiliconTech's cutting-edge semiconductor processes designed to enhance performance and efficiency.
Airgap SiliconTech - Advanced Insulation Techniques for Superior Chip Performance
Advanced insulation techniques
Discover how Airgap SiliconTech's air gap technology reduces capacitance for superior chip performance.
Airgap SiliconTech - Precision Engineering for High-Quality Semiconductor Manufacturing
Precision engineering
Airgap SiliconTech's commitment to precision ensures the highest quality in semiconductor manufacturing.
Airgap SiliconTech - Revolutionizing the Semiconductor Industry with Groundbreaking Advancements
Revolutionizing the industry
Join Airgap SiliconTech in transforming the semiconductor landscape with groundbreaking advancements.

Academic Validation

IITC2022 Paper

"A Novel Air-gap Formation Method for Metal Interconnect"

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Breakthrough Air-gap Process Innovation

First public disclosure of an air-gap formation process based on electrospinning technology

Scalable for the Future of Semiconductor Nodes

Demonstration of a scalable structure applicable to sub-10nm technology nodes.